METAL-INSULATOR TRANSITIONS IN POLYCRYSTALLINE VOx THIN FILMS

Metal-insulator transition properties in polycrystalline VO x thin films, which were deposited using rf magnetron sputtering with a vanadium target on Pt/Ti/SiO 2 /Si substrates, were studied in terms of structural and electrical characteristics. The phase change of VO x thin films by annealing was...

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Bibliographic Details
Published in:Integrated ferroelectrics 2006-11, Vol.80 (1), p.181-188
Main Authors: LEE, JANG WOO, PARK, IK HYUN, CHO, SUNG IL, CHO, CHOONG-RAE, CHUNG, CHEE WON
Format: Article
Language:English
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Summary:Metal-insulator transition properties in polycrystalline VO x thin films, which were deposited using rf magnetron sputtering with a vanadium target on Pt/Ti/SiO 2 /Si substrates, were studied in terms of structural and electrical characteristics. The phase change of VO x thin films by annealing was confirmed from amorphous VO x films to mixed crystalline phases containing V 2 O 3 ,VO 2 ,V 6 O 13 , and V 2 O 5 . The metal-insulator transition of VO x thin films was observed by current-voltage measurement as a function of top-electrode area and the temperature. It was demonstrated that the VO x thin films can be applied to memory devices employing the transition from a high-resistance (off) insulating state to a low-resistance (on) metallic state.
ISSN:1058-4587
1607-8489
DOI:10.1080/10584580600657609