METAL-INSULATOR TRANSITIONS IN POLYCRYSTALLINE VOx THIN FILMS

Metal-insulator transition properties in polycrystalline VO x thin films, which were deposited using rf magnetron sputtering with a vanadium target on Pt/Ti/SiO 2 /Si substrates, were studied in terms of structural and electrical characteristics. The phase change of VO x thin films by annealing was...

Full description

Saved in:
Bibliographic Details
Published in:Integrated ferroelectrics 2006-11, Vol.80 (1), p.181-188
Main Authors: LEE, JANG WOO, PARK, IK HYUN, CHO, SUNG IL, CHO, CHOONG-RAE, CHUNG, CHEE WON
Format: Article
Language:English
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by
cites
container_end_page 188
container_issue 1
container_start_page 181
container_title Integrated ferroelectrics
container_volume 80
creator LEE, JANG WOO
PARK, IK HYUN
CHO, SUNG IL
CHO, CHOONG-RAE
CHUNG, CHEE WON
description Metal-insulator transition properties in polycrystalline VO x thin films, which were deposited using rf magnetron sputtering with a vanadium target on Pt/Ti/SiO 2 /Si substrates, were studied in terms of structural and electrical characteristics. The phase change of VO x thin films by annealing was confirmed from amorphous VO x films to mixed crystalline phases containing V 2 O 3 ,VO 2 ,V 6 O 13 , and V 2 O 5 . The metal-insulator transition of VO x thin films was observed by current-voltage measurement as a function of top-electrode area and the temperature. It was demonstrated that the VO x thin films can be applied to memory devices employing the transition from a high-resistance (off) insulating state to a low-resistance (on) metallic state.
doi_str_mv 10.1080/10584580600657609
format article
fullrecord <record><control><sourceid>proquest_infor</sourceid><recordid>TN_cdi_informaworld_taylorfrancis_310_1080_10584580600657609</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>29400457</sourcerecordid><originalsourceid>FETCH-LOGICAL-i287t-c236cb70e077700e769608478f34c1698b9d4e909533d37099202fc4472752783</originalsourceid><addsrcrecordid>eNqFkEtLw0AUhQdRsFZ_gLus3EXvPDJ3BnRRSh-BNJEmFboa0jSBSNpoJsX67x2puy5c3Qvn-87iEHJP4ZGCgicKgRKBAgkgA5SgL8iASkBfCaUv3e9y3wF4TW6sfQeg3GED8rKYZKPID-N0FY2yZOlly1GchlmYxKkXxt5rEq3Hy3XqoCiMJ95bcvSyuQumYbRIb8lVlTe2vPu7Q7KaTrLx3I-SWTh2vTVT2PsF47LYIJSAiAAlSi1BCVQVFwWVWm30VpQadMD5liNozYBVhRDIMGCo-JA8nHo_uvbzUNre7GpblE2T78v2YA3TAkAE6MDnE1jvq7bb5V9t12xNn383bVd1-b6oreEUzO9m5mwzp-O_-pll-mPPfwAm3Gn9</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>29400457</pqid></control><display><type>article</type><title>METAL-INSULATOR TRANSITIONS IN POLYCRYSTALLINE VOx THIN FILMS</title><source>Taylor and Francis Science and Technology Collection</source><creator>LEE, JANG WOO ; PARK, IK HYUN ; CHO, SUNG IL ; CHO, CHOONG-RAE ; CHUNG, CHEE WON</creator><creatorcontrib>LEE, JANG WOO ; PARK, IK HYUN ; CHO, SUNG IL ; CHO, CHOONG-RAE ; CHUNG, CHEE WON</creatorcontrib><description>Metal-insulator transition properties in polycrystalline VO x thin films, which were deposited using rf magnetron sputtering with a vanadium target on Pt/Ti/SiO 2 /Si substrates, were studied in terms of structural and electrical characteristics. The phase change of VO x thin films by annealing was confirmed from amorphous VO x films to mixed crystalline phases containing V 2 O 3 ,VO 2 ,V 6 O 13 , and V 2 O 5 . The metal-insulator transition of VO x thin films was observed by current-voltage measurement as a function of top-electrode area and the temperature. It was demonstrated that the VO x thin films can be applied to memory devices employing the transition from a high-resistance (off) insulating state to a low-resistance (on) metallic state.</description><identifier>ISSN: 1058-4587</identifier><identifier>EISSN: 1607-8489</identifier><identifier>DOI: 10.1080/10584580600657609</identifier><language>eng</language><publisher>Taylor &amp; Francis Group</publisher><ispartof>Integrated ferroelectrics, 2006-11, Vol.80 (1), p.181-188</ispartof><rights>Copyright Taylor &amp; Francis Group, LLC 2006</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>LEE, JANG WOO</creatorcontrib><creatorcontrib>PARK, IK HYUN</creatorcontrib><creatorcontrib>CHO, SUNG IL</creatorcontrib><creatorcontrib>CHO, CHOONG-RAE</creatorcontrib><creatorcontrib>CHUNG, CHEE WON</creatorcontrib><title>METAL-INSULATOR TRANSITIONS IN POLYCRYSTALLINE VOx THIN FILMS</title><title>Integrated ferroelectrics</title><description>Metal-insulator transition properties in polycrystalline VO x thin films, which were deposited using rf magnetron sputtering with a vanadium target on Pt/Ti/SiO 2 /Si substrates, were studied in terms of structural and electrical characteristics. The phase change of VO x thin films by annealing was confirmed from amorphous VO x films to mixed crystalline phases containing V 2 O 3 ,VO 2 ,V 6 O 13 , and V 2 O 5 . The metal-insulator transition of VO x thin films was observed by current-voltage measurement as a function of top-electrode area and the temperature. It was demonstrated that the VO x thin films can be applied to memory devices employing the transition from a high-resistance (off) insulating state to a low-resistance (on) metallic state.</description><issn>1058-4587</issn><issn>1607-8489</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><recordid>eNqFkEtLw0AUhQdRsFZ_gLus3EXvPDJ3BnRRSh-BNJEmFboa0jSBSNpoJsX67x2puy5c3Qvn-87iEHJP4ZGCgicKgRKBAgkgA5SgL8iASkBfCaUv3e9y3wF4TW6sfQeg3GED8rKYZKPID-N0FY2yZOlly1GchlmYxKkXxt5rEq3Hy3XqoCiMJ95bcvSyuQumYbRIb8lVlTe2vPu7Q7KaTrLx3I-SWTh2vTVT2PsF47LYIJSAiAAlSi1BCVQVFwWVWm30VpQadMD5liNozYBVhRDIMGCo-JA8nHo_uvbzUNre7GpblE2T78v2YA3TAkAE6MDnE1jvq7bb5V9t12xNn383bVd1-b6oreEUzO9m5mwzp-O_-pll-mPPfwAm3Gn9</recordid><startdate>20061101</startdate><enddate>20061101</enddate><creator>LEE, JANG WOO</creator><creator>PARK, IK HYUN</creator><creator>CHO, SUNG IL</creator><creator>CHO, CHOONG-RAE</creator><creator>CHUNG, CHEE WON</creator><general>Taylor &amp; Francis Group</general><scope>7QQ</scope><scope>7SP</scope><scope>7SR</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20061101</creationdate><title>METAL-INSULATOR TRANSITIONS IN POLYCRYSTALLINE VOx THIN FILMS</title><author>LEE, JANG WOO ; PARK, IK HYUN ; CHO, SUNG IL ; CHO, CHOONG-RAE ; CHUNG, CHEE WON</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i287t-c236cb70e077700e769608478f34c1698b9d4e909533d37099202fc4472752783</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2006</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>LEE, JANG WOO</creatorcontrib><creatorcontrib>PARK, IK HYUN</creatorcontrib><creatorcontrib>CHO, SUNG IL</creatorcontrib><creatorcontrib>CHO, CHOONG-RAE</creatorcontrib><creatorcontrib>CHUNG, CHEE WON</creatorcontrib><collection>Ceramic Abstracts</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Integrated ferroelectrics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>LEE, JANG WOO</au><au>PARK, IK HYUN</au><au>CHO, SUNG IL</au><au>CHO, CHOONG-RAE</au><au>CHUNG, CHEE WON</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>METAL-INSULATOR TRANSITIONS IN POLYCRYSTALLINE VOx THIN FILMS</atitle><jtitle>Integrated ferroelectrics</jtitle><date>2006-11-01</date><risdate>2006</risdate><volume>80</volume><issue>1</issue><spage>181</spage><epage>188</epage><pages>181-188</pages><issn>1058-4587</issn><eissn>1607-8489</eissn><abstract>Metal-insulator transition properties in polycrystalline VO x thin films, which were deposited using rf magnetron sputtering with a vanadium target on Pt/Ti/SiO 2 /Si substrates, were studied in terms of structural and electrical characteristics. The phase change of VO x thin films by annealing was confirmed from amorphous VO x films to mixed crystalline phases containing V 2 O 3 ,VO 2 ,V 6 O 13 , and V 2 O 5 . The metal-insulator transition of VO x thin films was observed by current-voltage measurement as a function of top-electrode area and the temperature. It was demonstrated that the VO x thin films can be applied to memory devices employing the transition from a high-resistance (off) insulating state to a low-resistance (on) metallic state.</abstract><pub>Taylor &amp; Francis Group</pub><doi>10.1080/10584580600657609</doi><tpages>8</tpages></addata></record>
fulltext fulltext
identifier ISSN: 1058-4587
ispartof Integrated ferroelectrics, 2006-11, Vol.80 (1), p.181-188
issn 1058-4587
1607-8489
language eng
recordid cdi_informaworld_taylorfrancis_310_1080_10584580600657609
source Taylor and Francis Science and Technology Collection
title METAL-INSULATOR TRANSITIONS IN POLYCRYSTALLINE VOx THIN FILMS
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-26T15%3A55%3A44IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_infor&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=METAL-INSULATOR%20TRANSITIONS%20IN%20POLYCRYSTALLINE%20VOx%20THIN%20FILMS&rft.jtitle=Integrated%20ferroelectrics&rft.au=LEE,%20JANG%20WOO&rft.date=2006-11-01&rft.volume=80&rft.issue=1&rft.spage=181&rft.epage=188&rft.pages=181-188&rft.issn=1058-4587&rft.eissn=1607-8489&rft_id=info:doi/10.1080/10584580600657609&rft_dat=%3Cproquest_infor%3E29400457%3C/proquest_infor%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-i287t-c236cb70e077700e769608478f34c1698b9d4e909533d37099202fc4472752783%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=29400457&rft_id=info:pmid/&rfr_iscdi=true