Characterization of self-patterned SrBi2Ta2O9 thin films from photo-sensitive solutions

Self-patterned SrBi 2 Ta 2 O 9 thin films were successfully fabricated from photo-sensitive solutions by means of UV irradiation through photo masks. After conventional baking and wet etching the films were annealed. The photo-sensitive SrBi 2 Ta 2 O 9 solutions give high resolution negative-pattern...

Full description

Saved in:
Bibliographic Details
Published in:Integrated ferroelectrics 1997-04, Vol.16 (1-4), p.41-52
Main Authors: Uchida, H., Soyama, N., Kageyama, K., Ogi, K., Scott, M. C., Cuchiaro, J. D., Derbenwick, G. F., Mcmillan, L. D., Paz De Araujo, C. A.
Format: Article
Language:English
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Self-patterned SrBi 2 Ta 2 O 9 thin films were successfully fabricated from photo-sensitive solutions by means of UV irradiation through photo masks. After conventional baking and wet etching the films were annealed. The photo-sensitive SrBi 2 Ta 2 O 9 solutions give high resolution negative-pattern of the mask image down to 1 μm line width by deep UV irradiation at 900 mJ/cm 2 . The capacitor characteristics of the 210 nm thick films fabricated on the Pt/Ti/SiO 2 /Si substrates by this process showed 2Pr values of 17 μC/cm 2 , 2Ec of 89 kV/cm, and leakage current densities of 5×10 −9 A/cm 2 at 5 V. The films showed no fatigue after 1×10 11 switching cycles.
ISSN:1058-4587
1607-8489
DOI:10.1080/10584589708013028