Measurements of vapor pressures of MOCVD materials, which are usable for ferroelectric thin films

Measurements of vapor pressures for various chemicals, which might be used for MOCVD technique to form ferroelectrics on silicon devices, have been carried out under low pressure ambients with argon gas as carrier, so that the measuring conditions resembled the actual cases. Some of the chemicals ha...

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Bibliographic Details
Published in:Integrated ferroelectrics 1997-09, Vol.18 (1-4), p.183-196
Main Authors: Kojima, Yutaka, Kadokura, Hidekini, Okuhara, Yadokura, Matsumoto, Masamichi, Mogi, Takayuki
Format: Article
Language:English
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Summary:Measurements of vapor pressures for various chemicals, which might be used for MOCVD technique to form ferroelectrics on silicon devices, have been carried out under low pressure ambients with argon gas as carrier, so that the measuring conditions resembled the actual cases. Some of the chemicals have been synthesized and refined under high vacuum conditions to guarantee their organic purity. As an example of our MOCVD, use of bismuth tertiary butoxide and strontium bis (hexaisopro-poxytantalum) to form SBT (strontium bismuth tantalate) thin film on a silicon wafer has been introduced.
ISSN:1058-4587
1607-8489
DOI:10.1080/10584589708221698