Electrical properties of SrBi2Ta2O9 thin films deposited by RF magnetron sputtering

Ferroelectric bismuth layer oxide SrBi 2 Ta 2 O 9 (SBT) thin films were deposited on Pt/Ti/SiO 2 /Si substrates by rf magnetron sputtering at 500°C and then, were annealed at 850°C for 1 hr in oxygen ambient. The remanent polarization(2P r ) and the coercive field(2E c ) of a 300nm thick SBT film de...

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Bibliographic Details
Published in:Integrated ferroelectrics 1997-01, Vol.18 (1-4), p.377-387
Main Authors: Yang, Cheol-Hoon, Park, Sang-Shik, Yoon, Soon-Gil
Format: Article
Language:English
Subjects:
Bi-layered ferroelectrics
FRAM
SrBi
Online Access:Get full text
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Summary:Ferroelectric bismuth layer oxide SrBi 2 Ta 2 O 9 (SBT) thin films were deposited on Pt/Ti/SiO 2 /Si substrates by rf magnetron sputtering at 500°C and then, were annealed at 850°C for 1 hr in oxygen ambient. The remanent polarization(2P r ) and the coercive field(2E c ) of a 300nm thick SBT film deposited in 10mtorr were 18.5 μC/cm 2 and 150kV/cm at an applied voltage of 5V, respectively. The SBT films showed a fatigue-free characteristics up to 10 10 cycles under 5V bipolar pulse. The leakage current density of the SBT films were about 8.6 × 10 −8 A/cm 2 at 100kV/cm.
ISSN:1058-4587
1607-8489
DOI:10.1080/10584589708221714