Low temperature preparation of ferroelectric SrBi2Ta2O9 thin films by a modified RF magnetron sputtering technique

Bi-layered ferroelectric SrBi 2 Ta 2 O 9 (SBT) films were successfully prepared on Pt/Ti/SiO 2 /Si substrates at 650°C by a modified rf magnetron sputtering technique. The SBT films annealed for 1 h in O 2 (760 torr) and again for 30 min in O 2 (5 torr) at 650°C show a average grain size of about 49...

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Bibliographic Details
Published in:Integrated ferroelectrics 1998-09, Vol.21 (1-4), p.475-483
Main Authors: Yang, Cheol-Hoon, Kim, Jae-Sun, Yoon, Soon-Gil
Format: Article
Language:English
Subjects:
modified rf magnetron sputtering
retention
SrBi
switching cycle
Online Access:Get full text
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Summary:Bi-layered ferroelectric SrBi 2 Ta 2 O 9 (SBT) films were successfully prepared on Pt/Ti/SiO 2 /Si substrates at 650°C by a modified rf magnetron sputtering technique. The SBT films annealed for 1 h in O 2 (760 torr) and again for 30 min in O 2 (5 torr) at 650°C show a average grain size of about 49 nm. The SBT films annealed at 65 0°C have a remanent polarization (P r ) of 6.0 μC/cm 2 and coercive field (E c ) of 36 kV/cm at an excitation voltage of 5 V. The films showed fatigue-free characteristics up to 4.0 × 10 10 switching cycles under 5 V bipolar pulse. The retention characteristics of SBT films looked very promosing up to 1.0 × 10 5 s.
ISSN:1058-4587
1607-8489
DOI:10.1080/10584589808202088