PZT capacitors using IrO2 electrode by RF magnetron sputtering

RF magnetron sputtered Pb(Zr x , Ti 1-x )O 3 [PZT] films were prepared on IrO 2 /SiO 2 /Si and Pt/IrO 2 /SiO 2 /Si substrates using the ceramic PZT target with Pb 1.1 (Zr 0.52 Ti 0.48 )O 3 composition. In order to obtain single perovskite phase, PZT film was sputtered at room temperature under Ar pl...

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Bibliographic Details
Published in:Integrated ferroelectrics 1998-01, Vol.21 (1-4), p.511-519
Main Authors: Hong, Kwon, You, In Kyu, Yu, Yong Sik, Lee, Sahang Kyoo
Format: Article
Language:English
Subjects:
fatigue
hybrid
leakage current density
perovskite
Pt/IoO
PZT
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Summary:RF magnetron sputtered Pb(Zr x , Ti 1-x )O 3 [PZT] films were prepared on IrO 2 /SiO 2 /Si and Pt/IrO 2 /SiO 2 /Si substrates using the ceramic PZT target with Pb 1.1 (Zr 0.52 Ti 0.48 )O 3 composition. In order to obtain single perovskite phase, PZT film was sputtered at room temperature under Ar plasma and followed by high temperature annealing under oxygen atmosphere. In case of Pt/PZT/IrO 2 capacitor, Δ P (=P*-P∧) was decreased with oxygen annealing temperature. However, it was increased in Pt/PZT/Pt/IrO 2 capacitor. Leakage current density of Pt/PZT/Pt/IrO 2 capacitor, which was used for improving leakage characteristics, was about 10 -2 A/cm −2 order lower than that of Pt/PZT/IrO 2 capacitor. Leakage current density of Pt/PZT/Pt/IrO 2 capacitor annealed at 700°C was 6.6x10 -6 A/cm 2 . From the fatigue test, Pt/PZT/IrO 2 capacitor annealed at 650°C and Pt/PZT/Pt/IrO 2 capacitor annealed at 700°C showed 3% and 12% degradation of Δ P after 5×10 10 fatigue cycles, respectively.
ISSN:1058-4587
1607-8489
DOI:10.1080/10584589808202091