Novel precursors for the MOCVD of ferroelectric thin films

MOCVD is an attractive technique for the deposition of ferroelectric thin films. In order to exploit the full potential of the technique, the properties of the metalorganic precursor sometimes need to be tailored in order to optimise process parameters. In this paper we describe how the substitution...

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Bibliographic Details
Published in:Integrated ferroelectrics 1999-10, Vol.26 (1-4), p.85-92
Main Authors: Leedham, Timothy J., Jones, Anthony C., Wright, Peter J., Crosbie, Michael J., Williams, Dennis J., Davies, Hywel O., O'Brien, Paul
Format: Article
Language:English
Subjects:
ferroelectric thin films
MOCVD
novel precursors
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Summary:MOCVD is an attractive technique for the deposition of ferroelectric thin films. In order to exploit the full potential of the technique, the properties of the metalorganic precursor sometimes need to be tailored in order to optimise process parameters. In this paper we describe how the substitution of simple alkoxide groups by β-diketonate or other chelating groups can lead to precursors with improved physical properties and optimised MOCVD performance.
ISSN:1058-4587
1607-8489
DOI:10.1080/10584589908215613