Electrical properties of Y1-based ferroelectric gate MOS capacitors for nonvolatile memory applications

Ferroelectric gate MOS capacitors using the "Y-1" family of ferroelectric materials were evaluated. The capacitors were formed by connecting the ferroelectric capacitor and the MIS capacitor in series. The experimental results show the dependence of the memory window on the ferroelectric/i...

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Bibliographic Details
Published in:Integrated ferroelectrics 1999-11, Vol.27 (1-4), p.19-29
Main Authors: Arita, K., Otsuki, T., Chen, Z., Lim, M., Bacon, J. W., Paz De Araujo, C. A.
Format: Article
Language:English
Subjects:
ferroelectric memories
memory window
MFSFETs
Y-1
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Summary:Ferroelectric gate MOS capacitors using the "Y-1" family of ferroelectric materials were evaluated. The capacitors were formed by connecting the ferroelectric capacitor and the MIS capacitor in series. The experimental results show the dependence of the memory window on the ferroelectric/insulator capacitance ratios, which gives some useful information on the design of MFSFETs.
ISSN:1058-4587
1607-8489
DOI:10.1080/10584589908228452