The use of Raman Spectroscopy for Characterisation of Ceramic Dielectrics

Al 2 O 3 doped with Ti0 2 at levels up to 5 wt% is characterised using Raman spectroscopy. Aluminium titanate (A1 2 TiO 5 ) is detected in the grain interiors at doping levels as low as 0.15 wt%. A grain boundary phase is identified. where the concentration of Al 2 TiO 5 , is much higher than in the...

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Bibliographic Details
Published in:Nondestructive testing and evaluation 2001-01, Vol.17 (4-5), p.205-212
Main Authors: Webb, S.J, Alford, N.McN, Penn, S.J, TEMPLETON, A., WANG, X.
Format: Article
Language:English
Subjects:
Ceramic
Dielectric
Raman
Ti0
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Summary:Al 2 O 3 doped with Ti0 2 at levels up to 5 wt% is characterised using Raman spectroscopy. Aluminium titanate (A1 2 TiO 5 ) is detected in the grain interiors at doping levels as low as 0.15 wt%. A grain boundary phase is identified. where the concentration of Al 2 TiO 5 , is much higher than in the grain interior. The Raman mapping technique is demonstrated by acquiring spectra in a grid formation in the region of a grain boundary phase. and obtaining an indication of the Al 2 TiO 5 concentration at each point. Further applications of the technique are discussed.
ISSN:1058-9759
1477-2671
DOI:10.1080/10589750108953111