Field Emission Characteristics of an Oxidized Porous Polysilicon Using Thermal Oxidation and Electrochemical Oxidation

The field emission characteristics of an oxidized porous polysilicon were investigated using different oxidation process with Pt/Ti multi layer electrode. The surface oxidation layer on an oxidized porous polysilicon was formed by thermal oxidation and electrochemical oxidation. The emission efficie...

Full description

Saved in:
Bibliographic Details
Published in:Molecular crystals and liquid crystals (Philadelphia, Pa. : 2003) Pa. : 2003), 2006-12, Vol.459 (1), p.179/[459]-190/[470]
Main Authors: Cho, Yong-Soo, Kown, Soon-Il, Bae, Seong-Chan, Choi, Sie-Young
Format: Article
Language:English
Subjects:
electrochemical oxidation
FED
field emission
porous polysilicon
thermal oxidation
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The field emission characteristics of an oxidized porous polysilicon were investigated using different oxidation process with Pt/Ti multi layer electrode. The surface oxidation layer on an oxidized porous polysilicon was formed by thermal oxidation and electrochemical oxidation. The emission efficiency of thermal oxidation which was performed in a dry O 2 with O 2 flow rate of 3 l/min at 900°C for 60 min showed 3.36% at V ps  = 16 V. The electrochemical oxidation was formed by solution containing 1 M sulphuric acid under 10 mA/cm 2 for 40 sec and was annealed 5 hr to improve oxide quality at 600°C. The emission efficiency of electrochemical oxidation showed 3.81% at V ps  = 14 V.
ISSN:1542-1406
1563-5287
DOI:10.1080/15421400600930169