Preparation of In2O3-ZnO (IZO) Thin Film on Glass Substrate for Organic Light Emitting Device (OLED)

The low resistivity and excellent surface smoothness of IZO makes it a good candidate for high-quality transparent conducting electrodes in OLEDs. The deposition of IZO thin film by Facing Targets Sputtering system on glass substrate as function of substrate temperature. The device structure of the...

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Bibliographic Details
Published in:Molecular crystals and liquid crystals (Philadelphia, Pa. : 2003) Pa. : 2003), 2010-01, Vol.520 (1), p.19/[295]-27/[303]
Main Authors: Hong, Jeong Soo, Kim, Sang Mo, Park, Sang Joon, Choi, Hyung Wook, Kim, Kyung Hwan
Format: Article
Language:English
Subjects:
Aluminum
Devices
Electrical resistivity
Electrodes
FTS
Glass
IZO
Molecular structure
OLED
Spectrometers
Thin films
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Summary:The low resistivity and excellent surface smoothness of IZO makes it a good candidate for high-quality transparent conducting electrodes in OLEDs. The deposition of IZO thin film by Facing Targets Sputtering system on glass substrate as function of substrate temperature. The device structure of the IZO anode is configuration of Al/LiF/Alq 3 /TPD/IZO. The electrical and optical properties of the as-doped IZO thin film were evaluated with UV/VIS spectrometer, Hall Effect measurement, XRD, AFM, FESEM. The resistivity and transmittance of the as-deposited films were 25.3 Ω/sq and above 80% in the visible range. The performance of OLED was evaluated by J-V-L measurements.
ISSN:1542-1406
1563-5287
DOI:10.1080/15421401003608287