Uniformity of PZT Thin Films Prepared by MOCVD on 8"φ Substrate

Pb(Zr, Ti)O 3 (PZT) thin films were prepared on 8" φ substrate by ULVAC-MOCVD system. Thickness and compositional uniformity of PZT films were remarkably depending on the deposition conditions. Film thickness uniformity of - 3% on 8" φ subatrate was achieved by optimizing the hardware cons...

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Bibliographic Details
Published in:Integrated ferroelectrics 2002-01, Vol.46 (1), p.65-77
Main Authors: Masuda, Takeshi, Kajinuma, Masahiko, Yamada, Takakazu, Uchida, Hiroto, Uematsu, Masaki, Suu, Koukou, Ishikawa, Michio
Format: Article
Language:English
Subjects:
Compositional Control
Ferroelectric Thin Film
Mocvd
Pzt
Uniformity
Online Access:Get full text
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Summary:Pb(Zr, Ti)O 3 (PZT) thin films were prepared on 8" φ substrate by ULVAC-MOCVD system. Thickness and compositional uniformity of PZT films were remarkably depending on the deposition conditions. Film thickness uniformity of - 3% on 8" φ subatrate was achieved by optimizing the hardware construction (O 2 -Precursor mixing and gas flow control) and deposition parameters. Compositional uniformity was also improved by controlling temperature distribution on the substrate and choosing precursors which have the close decomposition temperature. For ferroelectric properties of MOCVD-PZT films on 8" φ substrate, 2Pr above 40 w C/cm 2 were obtained throughout their measurement points.
ISSN:1058-4587
1607-8489
DOI:10.1080/713718264