Uniformity of PZT Thin Films Prepared by MOCVD on 8"φ Substrate

Pb(Zr, Ti)O 3 (PZT) thin films were prepared on 8" φ substrate by ULVAC-MOCVD system. Thickness and compositional uniformity of PZT films were remarkably depending on the deposition conditions. Film thickness uniformity of - 3% on 8" φ subatrate was achieved by optimizing the hardware cons...

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Published in:Integrated ferroelectrics 2002-01, Vol.46 (1), p.65-77
Main Authors: Masuda, Takeshi, Kajinuma, Masahiko, Yamada, Takakazu, Uchida, Hiroto, Uematsu, Masaki, Suu, Koukou, Ishikawa, Michio
Format: Article
Language:English
Subjects:
Compositional Control
Ferroelectric Thin Film
Mocvd
Pzt
Uniformity
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container_end_page 77
container_issue 1
container_start_page 65
container_title Integrated ferroelectrics
container_volume 46
creator Masuda, Takeshi
Kajinuma, Masahiko
Yamada, Takakazu
Uchida, Hiroto
Uematsu, Masaki
Suu, Koukou
Ishikawa, Michio
description Pb(Zr, Ti)O 3 (PZT) thin films were prepared on 8" φ substrate by ULVAC-MOCVD system. Thickness and compositional uniformity of PZT films were remarkably depending on the deposition conditions. Film thickness uniformity of - 3% on 8" φ subatrate was achieved by optimizing the hardware construction (O 2 -Precursor mixing and gas flow control) and deposition parameters. Compositional uniformity was also improved by controlling temperature distribution on the substrate and choosing precursors which have the close decomposition temperature. For ferroelectric properties of MOCVD-PZT films on 8" φ substrate, 2Pr above 40 w C/cm 2 were obtained throughout their measurement points.
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subjects Compositional Control
Ferroelectric Thin Film
Mocvd
Pzt
Uniformity
title Uniformity of PZT Thin Films Prepared by MOCVD on 8"φ Substrate
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