High-power pulsed laser diodes emitting in the range

This paper examines approaches for increasing the output pulse power of laser diodes based on MOVPE InGaAs/AlGaInAs/InP heterostructures and emitting in the range . We demonstrate that optimising waveguide layer parameters may ensure an increase in the quantum efficiency of the laser diodes and a re...

Full description

Saved in:
Bibliographic Details
Published in:Quantum electronics (Woodbury, N.Y.) N.Y.), 2013, Vol.43 (9), p.819-821
Main Authors: Gorlachuk, P.V., Ryaboshtan, Yu.L., Ladugin, M.A., Padalitsa, A.A., Marmalyuk, A.A., Kurnosov, V.D., Kurnosov, K.V., Zhuravleva, O.V., Romantsevich, V.I., Chernov, R.V., Ivanov, A.V., Simakov, V.A.
Format: Article
Language:English
Subjects:
laser diode
metal-organic vapour phase epitaxy
spectral range 1.5-1.6 μm
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:This paper examines approaches for increasing the output pulse power of laser diodes based on MOVPE InGaAs/AlGaInAs/InP heterostructures and emitting in the range . We demonstrate that optimising waveguide layer parameters may ensure an increase in the quantum efficiency of the laser diodes and a reduction in their internal optical loss. Characterisation results are presented for laser diodes based on the proposed heterostructures.
ISSN:1063-7818
1468-4799
DOI:10.1070/QE2013v043n09ABEH015284