High-power AlGaInAs/InP semiconductor lasers with an ultra-narrow waveguide emitting in the spectral range 1.9−2.0 μm

High-power semiconductor lasers based on AlGaInAs/InP heterostructures and emitting in the spectral range 1.9−2.0 μm are developed. Strain compensation in the active region makes it possible to use InGaAs quantum wells with a compressive strain of about 2.0 %−2.5 %. The operation of a laser with an...

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Bibliographic Details
Published in:Quantum electronics (Woodbury, N.Y.) N.Y.), 2021-10, Vol.51 (10), p.909-911
Main Authors: Svetogorov, V.N., Ryaboshtan, Yu.L., Volkov, N.A., Ladugin, M.A., Padalitsa, A.A., Marmalyuk, A.A., Bakhvalov, K.V., Veselov, D.A., Lyutetskii, A.V., Strelets, V.A., Slipchenko, S.O., Pikhtin, N.A.
Format: Article
Language:English
Subjects:
2-μm spectral region
AlGaInAs/InP
Compressive properties
heterostructure
Heterostructures
Indium gallium arsenides
Indium phosphides
Lasers
Quantum wells
Room temperature
semiconductor laser
Semiconductor lasers
Spectral emittance
ultra-narrow waveguide
Waveguides
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Summary:High-power semiconductor lasers based on AlGaInAs/InP heterostructures and emitting in the spectral range 1.9−2.0 μm are developed. Strain compensation in the active region makes it possible to use InGaAs quantum wells with a compressive strain of about 2.0 %−2.5 %. The operation of a laser with an ultra-narrow waveguide at wavelengths increasing from 1.4−1.6 to 2.0 μm is studied. At room temperature, the semiconductor lasers with a stripe contact width of 100 μm demonstrates a cw output optical power of 1.0 W with a wavelength of 1.91 μm at a pump current of 6.5 A and with a wavelength of 1.98 μm at a pump current of 7.2 A.
ISSN:1063-7818
1468-4799
DOI:10.1070/QEL17635