Compensation effect on the CW spin-polarization degree of Mn-based structures

We investigated the effects of Mn ions on the spin dynamics of electrons confined in a semiconductor quantum well nearby a Mn-based ferromagnetic layer. Circularly polarized Hanle and time-resolved photoluminescence (PL) measurements were carried out on a set of samples with different Mn delta-dopin...

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Bibliographic Details
Published in:Journal of physics. D, Applied physics Applied physics, 2013-05, Vol.46 (21), p.215103
Main Authors: Balanta, M A G, Brasil, M J S P, Iikawa, F, Mendes, U C, Brum, J A, Maialle, M Z, Danilov, Yu A, Vikhrova, O V, Zvonkov, B N
Format: Article
Language:English
Subjects:
Indium gallium arsenide
Manganese
Quantum well
Semiconductors
Spintronics
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Summary:We investigated the effects of Mn ions on the spin dynamics of electrons confined in a semiconductor quantum well nearby a Mn-based ferromagnetic layer. Circularly polarized Hanle and time-resolved photoluminescence (PL) measurements were carried out on a set of samples with different Mn delta-doping concentrations. We observe a strong influence of the Mn layer for both the electron lifetime and its spin-relaxation time for high-Mn concentrations, when the electrons significantly overlap with Mn ions. Our results also show that the circular-polarization degree obtained by simple continuous-wave PL measurements is not sufficient to determine the relaxation dynamics due to a compensation effect of the lifetime and the spin-relaxation time.
ISSN:0022-3727
1361-6463
DOI:10.1088/0022-3727/46/21/215103