Nonvolatile resistive switching behaviour and the mechanism in Nd:BiFeO3/Nb:SrTiO3 heterostructure

This paper reports the bipolar resistive switching (RS) effect of the Nd0.05Bi0.95FeO3/Nb:SrTiO3 heterostructure fabricated by pulsed laser deposition. This heterostructure shows a high RS ratio of over 600 at a read voltage of −0.3V after applying 5V/−8V pulse voltages. Moreover, the resistance sta...

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Bibliographic Details
Published in:Journal of physics. D, Applied physics Applied physics, 2013-05, Vol.46 (21)
Main Authors: Zhu, Yongdan, Li, Meiya, Hu, Zhongqiang, Liu, Xiaolian, Wang, Qiangwen, Fang, Xiaoli, Guo, Kaimo
Format: Article
Language:English
Subjects:
Applied sciences
bipolar resistive switching
carrier injection
Compound structure devices
Electronics
Exact sciences and technology
heterostructure
Integrated circuits
Integrated circuits by function (including memories and processors)
multilevel memories
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:This paper reports the bipolar resistive switching (RS) effect of the Nd0.05Bi0.95FeO3/Nb:SrTiO3 heterostructure fabricated by pulsed laser deposition. This heterostructure shows a high RS ratio of over 600 at a read voltage of −0.3V after applying 5V/−8V pulse voltages. Moreover, the resistance states could be switched reversibly among multilevel resistance states by changing the magnitude of set or reset pulse voltages, which shows promise for multilevel nonvolatile memory application. The mechanism of the RS between high- and low-resistance states could be attributed to the carrier injection-trapped/detrapped process, which changes the height and thickness of the barrier at the Nd0.05Bi0.95FeO3/Nb:SrTiO3interface.
ISSN:0022-3727
1361-6463
DOI:10.1088/0022-3727/46/21/215305