Resistive switching in ferroelectric lead-free 0.5Ba (Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 thin films

In this work, resistive switching in pulsed laser deposited ferroelectric lead-free 0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 (0.5BZT-0.5BCT) thin films was investigated. This study reveals that films grown at 5.5 J cm−2 have shown optimal ferroelectric and resistive switching response, which are attr...

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Bibliographic Details
Published in:Journal of physics. D, Applied physics Applied physics, 2016-07, Vol.49 (33)
Main Authors: Silva, J P B, Kamakshi, K, Sekhar, K C, Queirós, E C, Agostinho Moreira, J, Almeida, A, Pereira, M, Tavares, P B, Gomes, M J M
Format: Article
Language:English
Subjects:
(0.5BZT-0.5BCT) thin film
ferroelectricity
pulsed laser deposition
resistive switching
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Summary:In this work, resistive switching in pulsed laser deposited ferroelectric lead-free 0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 (0.5BZT-0.5BCT) thin films was investigated. This study reveals that films grown at 5.5 J cm−2 have shown optimal ferroelectric and resistive switching response, which are attributed to high tetragonality, large grain size and less defect concentration. Au/0.5BZT-0.5BCT/Pt capacitors show the electroforming free resistive switching that is explained based on the polarization modulation of the Schottky-like barrier at the 0.5BZT-0.5BCT/Au interface. The polarization induced resistive switching is evidenced by its disappearance as the temperature increases to the Curie temperature. The capacitor based on film grown at 5.5 J cm−2 shows resistive switching characterized by high switching ratio of 106 at a low set/reset voltage   1 V, and by a stable memory window, which are highly required for memory applications.
ISSN:0022-3727
1361-6463
DOI:10.1088/0022-3727/49/33/335301