Room temperature photo-response of titanium supersaturated silicon at energies over the bandgap

Silicon samples were implanted with high Ti doses and subsequently processed with the pulsed-laser melting technique. The electronic transport properties in the 15-300 K range and the room temperature spectral photoresponse at energies over the bandgap were measured. Samples with Ti concentration be...

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Bibliographic Details
Published in:Journal of physics. D, Applied physics Applied physics, 2016-01, Vol.49 (5), p.55103-55109
Main Authors: Olea, J, López, E, Antolín, E, Martí, A, Luque, A, García-Hemme, E, Pastor, D, García-Hernansanz, R, del Prado, A, González-Díaz, G
Format: Article
Language:English
Subjects:
Band theory
Carrier lifetime
Energy gaps (solid state)
Melting
photoresponse
Silicon
Solar cells
Spectra
supersaturated
Titanium
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Summary:Silicon samples were implanted with high Ti doses and subsequently processed with the pulsed-laser melting technique. The electronic transport properties in the 15-300 K range and the room temperature spectral photoresponse at energies over the bandgap were measured. Samples with Ti concentration below the insulator-metal (I-M) transition limit showed a progressive reduction of the carrier lifetime in the implanted layer as Ti dose is increased. However, when the Ti concentration exceeded this limit, an extraordinary recovery of the photoresponse was measured. This result supports the theory of intermediate band materials and is of utmost relevance for photovoltaic cells and Si-based detectors.
ISSN:0022-3727
1361-6463
DOI:10.1088/0022-3727/49/5/055103