Frequency Performance of Ring Oscillators Based on a-IGZO Thin-Film TransistorsSupported by the National Basic Research Program of China under Grant Nos 2011CB301900 and 2011CB922100, and the Priority Academic Program Development of Jiangsu Higher Education Institutions

Ring oscillators based on indium gallium zinc oxide thin film transistors are fabricated on glass substrates. The oscillator circuit consists of seven delay stages and an output buffer inverter. The element inverter exhibits a voltage gain higher than −6V/V and a wide output swing close to 85% of th...

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Bibliographic Details
Published in:Chinese physics letters 2015-04, Vol.32 (4)
Main Authors: Yu, Guang, Wu, Chen-Fei, Lu, Hai, Ren, Fang-Fang, Zhang, Rong, Zheng, You-Dou, Huang, Xiao-Ming
Format: Article
Language:English
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Summary:Ring oscillators based on indium gallium zinc oxide thin film transistors are fabricated on glass substrates. The oscillator circuit consists of seven delay stages and an output buffer inverter. The element inverter exhibits a voltage gain higher than −6V/V and a wide output swing close to 85% of the full swing range. The dynamic performance of the ring oscillators is evaluated as a function of supply voltage and at different gate lengths. A maximum oscillation frequency of 0.88MHz is obtained for a supply voltage of 50 V, corresponding to a propagation delay of less than 85 ns/stage.
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/32/4/047302