A 40-GHz Colliding Pulse Mode-Locked Semiconductor LaserSupported by the National Natural Science Foundation of China under Grant Nos 61335009, 61274046 and 61474111

A monolithically active-passive integrated colliding pulse mode-locked semiconductor laser is demonstrated in the InGaAsP/InP material system. The device is mode locked at the second harmonic passive mode-locking regime with a wide mode-locking range. Pulse trains with the repetition rate of 40 GHz,...

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Bibliographic Details
Published in:Chinese physics letters 2016-06, Vol.33 (6)
Main Authors: Liu, Song-Tao, Zhang, Rui-Kang, Lu, Dan, Kan, Qiang, Wang, Wei, Ji, Chen
Format: Article
Language:English
Online Access:Get full text
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Summary:A monolithically active-passive integrated colliding pulse mode-locked semiconductor laser is demonstrated in the InGaAsP/InP material system. The device is mode locked at the second harmonic passive mode-locking regime with a wide mode-locking range. Pulse trains with the repetition rate of 40 GHz, 3-dB rf line width of 25 kHz, the pulse width of 2.5 ps, and a nearly transform-limited time-bandwidth product of 0.53 are obtained.
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/33/6/064205