Influence of the Diamond Layer on the Electrical Characteristics of AlGaN/GaN High-Electron-Mobility Transistors Supported by the National Natural Science Foundation of China under Grant Nos 61334002, 61474091, 61574110 and 61574112, the National Key Research and Development Plan of China under Grant No 2016YFB0400205, the 111 Project of the Ministry of Education of China under Grant No B12026, and the Scientific Research Foundation for the Returned Overseas Chinese Scholars of the Ministry of E

• Published in: Chinese physics letters 2017-02, Vol.34 (2)
• Main Authors: Zheng, Xue-Feng, Wang, Ao-Chen, Hou, Xiao-Hui, Wang, Ying-Zhe, Wen, Hao-Yu, Wang, Chong, Lu, Yang, Mao, Wei, Ma, Xiao-Hua, Hao, Yue
• Format: Article
• Language: English
• ISSN: 0256-307X
• DOI: 10.1088/0256-307X/34/2/027301

The thermal management is an important issue for AlGaN/GaN high-electron-mobility transistors (HEMTs). In this work, the influence of the diamond layer on the electrical characteristics of AlGaN/GaN HEMTs is investigated by simulation. The results show that the lattice temperature can be effectively decreased by utilizing the diamond layer. With increasing the drain bias, the diamond layer plays a more significant role for lattice temperature reduction. It is also observed that the diamond layer can induce a negative shift of threshold voltage and an increase of transconductance. Furthermore, the influence of the diamond layer thickness on the frequency characteristics is investigated as well. By utilizing the 10-μm-thickness diamond layer in this work, the cutoff frequency fT and maximum oscillation frequency fmax can be increased by 29% and 47%, respectively. These results demonstrate that the diamond layer is an effective technique for lattice temperature reduction and the study can provide valuable information for HEMTs in high-power and high-frequency applications.