High-Power Single-Spatial-Mode GaSb Tapered Laser around 2.0 μm with Very Small Lateral Beam Divergence Supported by the National Basic Research Program of China under Grant Nos 2014CB643903 and 2013CB932904, the National Natural Science Foundation of China under Grant Nos 61435012 and 61290303, and the Strategic Priority Research Program (B) of the Chinese Academy of Sciences under Grant No XDB01010200

We report high-power single-spatial-mode type-I GaSb-based tapered lasers fabricated on the InGaSb/AlGaAsSb material system. A straight ridge and three different tapered waveguide structures with varying flare angles are fabricated to optimize the output power and spatial-mode performance. The best...

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Bibliographic Details
Published in:Chinese physics letters 2017-08, Vol.34 (8)
Main Authors: Huang, Shu-Shan, Zhang, Yu, Liao, Yong-Ping, Yang, Cheng-Ao, Chai, Xiao-Li, Xu, Ying-Qiang, Ni, Hai-Qiao, Niu, Zhi-Chuan
Format: Article
Language:English
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Summary:We report high-power single-spatial-mode type-I GaSb-based tapered lasers fabricated on the InGaSb/AlGaAsSb material system. A straight ridge and three different tapered waveguide structures with varying flare angles are fabricated to optimize the output power and spatial-mode performance. The best devices exhibit single-spatial-mode operation with room-temperature output power up to 350 mW in continuous-wave mode at an emission wavelength around 2.0 μm with a very small far-field lateral divergence angle, which is beyond state of the art in terms of single-spatial-mode output power.
ISSN:0256-307X
DOI:10.1088/0256-307X/34/8/084202