The Mn site in Mn-doped GaAs nanowires: an EXAFS study

We present an EXAFS study of the Mn atomic environment in Mn-doped GaAs nanowires. Mn doping has been obtained either via the diffusion of the Mn used as seed for the nanowire growth or by providing Mn during the growth of Au-induced wires. As a general finding, we observe that Mn forms chemical bon...

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Bibliographic Details
Published in:Semiconductor science and technology 2012-08, Vol.27 (8), p.85001
Main Authors: d'Acapito, F, Rovezzi, M, Boscherini, F, Jabeen, F, Bais, G, Piccin, M, Rubini, S, Martelli, F
Format: Article
Language:English
Subjects:
dilute magnetic semiconductor
GaAs
manganese
nanowires
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Summary:We present an EXAFS study of the Mn atomic environment in Mn-doped GaAs nanowires. Mn doping has been obtained either via the diffusion of the Mn used as seed for the nanowire growth or by providing Mn during the growth of Au-induced wires. As a general finding, we observe that Mn forms chemical bonds with As but is not incorporated in a substitutional site. In Mn-induced GaAs wires, Mn is mostly found bonded to As in a rather disordered environment and with a stretched bond length, reminiscent of that exhibited by MnAs phases. In Au-seeded nanowires, along with stretched MnAs coordination, we have found the presence of Mn in a MnAu intermetallic compound.
ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/27/8/085001