Characterization of random telegraph noise generated in the space region in NAND flash memory strings

We firstly report the observation and characterization of random telegraph noise (RTN) generated in the inter word-line dielectric (IWD) of the region between adjacent word-lines (called the space region) in a cell string of 26 nm NAND flash memory. The RTN is named as space RTN, and its existence i...

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Bibliographic Details
Published in:Semiconductor science and technology 2014-12, Vol.29 (12), p.125001
Main Authors: Kang, Ho-Jung, Jeong, Min-Kyu, Joe, Sung-Min, Park, Byung-Gook, Lee, Jong-Ho
Format: Article
Language:English
Subjects:
NAND flash memory
pass bias dependency
random telegraph noise (RTN)
space region
trap position
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Summary:We firstly report the observation and characterization of random telegraph noise (RTN) generated in the inter word-line dielectric (IWD) of the region between adjacent word-lines (called the space region) in a cell string of 26 nm NAND flash memory. The RTN is named as space RTN, and its existence is verified by applying our approach. The space RTN is compared with the channel RTN in terms of capture and emission times, depending on a pass bias, and is directly affected by a pass bias of adjacent cells. By considering the simulated electrostatic potential in the space region at various pass biases, we can extract the lateral position of a trap responsible for the space RTN.
ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/29/12/125001