Investigation of the effect of oxygen gas on properties of GAZO thin films fabricated by facing targets sputtering system

Gallium and aluminum co-doped ZnO (GAZO) thin films were deposited on glass substrate by using a facing targets sputtering system under various oxygen atmosphere, and the effect of oxygen on their structural, optical and electrical properties was investigated. All as-deposited GAZO thin films under...

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Bibliographic Details
Published in:Semiconductor science and technology 2014-07, Vol.29 (7), p.75007
Main Authors: Hong, Jeong Soo, Matsushita, Nobuhiro, Kim, Kyung Hwan
Format: Article
Language:English
Subjects:
GAZO
oxygen
sputtering
thin film
ZnO
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Summary:Gallium and aluminum co-doped ZnO (GAZO) thin films were deposited on glass substrate by using a facing targets sputtering system under various oxygen atmosphere, and the effect of oxygen on their structural, optical and electrical properties was investigated. All as-deposited GAZO thin films under oxygen atmosphere exhibited smooth surface and the lowest value of root-mean-square was 0.6 nm at oxygen 1 sccm, this value is lower than that of film deposited at pure argon atmosphere. The (0 0 2) peak intensity was increased with increase in oxygen flow rate, the peak maximized at oxygen 1 sccm. All films indicated high transmittance above 85% in the visible range and the lowest resistivity of 8.9 × 10−4 Ω · cm was obtained at pure argon atmosphere.
ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/29/7/075007