InGaP grown on Ge (100) by molecular beam epitaxy: a spectroscopic ellipsometry study

We investigated the optical properties of disordered In0.52Ga0.48P alloys by spectroscopic ellipsometry in the far-infrared to ultraviolet energy range (0.037-5.1 eV). The alloys were grown on Ge (100) substrate by solid-source molecular beam epitaxy. The far-infrared dielectric function reveals two...

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Bibliographic Details
Published in:Semiconductor science and technology 2016-03, Vol.31 (3), p.35022
Main Authors: D'Costa, Vijay Richard, Loke, Wan Khai, Zhou, Qian, Yoon, Soon Fatt, Yeo, Yee-Chia
Format: Article
Language:English
Subjects:
InGaP/Ge by molecular beam epitaxy
optical properties of InGaP
spectroscopic ellipsometry
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Summary:We investigated the optical properties of disordered In0.52Ga0.48P alloys by spectroscopic ellipsometry in the far-infrared to ultraviolet energy range (0.037-5.1 eV). The alloys were grown on Ge (100) substrate by solid-source molecular beam epitaxy. The far-infrared dielectric function reveals two absorption peaks that can be attributed to InP- and GaP-like vibrational modes. The visible-UV dielectric function of In0.52Ga0.48P alloys nearly lattice-matched to Ge shows the critical points E0, E1, and E2, energies of which are determined using a derivative analysis. A weak transition that can be identified as the E1 + Δ1 critical point is revealed. The vibrational frequencies and the transition energies in In0.52Ga0.48P are lower relative to In0.49Ga0.51P lattice-matched to GaAs. The downward shifts in E0 and phonons can be estimated using the compositional dependence of E0 and phonons of bulk alloys.
ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/31/3/035022