Estimating the thermal expansion coefficient of graphene: the role of graphene-substrate interactions

The temperature-dependent thermal expansion coefficient of graphene is estimated for as-grown chemical vapor deposited graphene using temperature-dependent Raman spectroscopy. For as-grown graphene on copper, the extent of thermal expansion mismatch between substrate and the graphene layer is signif...

Full description

Saved in:
Bibliographic Details
Published in:Journal of physics. Condensed matter 2016-03, Vol.28 (8), p.085301-085301
Main Authors: Shaina, P R, George, Lijin, Yadav, Vani, Jaiswal, Manu
Format: Article
Language:English
Subjects:
CHEMICAL VAPOR DEPOSITION
Condensed matter
Copper
CVD graphene
Estimating
Graphene
Raman spectroscopy
Silicon substrates
STRAIN
Substrates
Thermal expansion
THERMAL EXPANSION COEFFICIENT
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The temperature-dependent thermal expansion coefficient of graphene is estimated for as-grown chemical vapor deposited graphene using temperature-dependent Raman spectroscopy. For as-grown graphene on copper, the extent of thermal expansion mismatch between substrate and the graphene layer is significant across the entire measured temperature interval, T  =  90-300 K. This mismatch induces lattice strain in graphene. However, graphene grown on copper substrates has a unique morphology in the form of quasi-periodic nanoripples. This crucially influences the profile of the strain in the graphene membrane, which is uniaxial. An estimate of the thermal expansion coefficient of graphene is obtained after consideration of this strain profile and after incorporating temperature-dependent Grüneisen parameter corrections. The value of , is found to be negative (average value, −3.75  ×  10−6 K−1) for the entire temperature range and it approaches close to zero for T  
ISSN:0953-8984
1361-648X
DOI:10.1088/0953-8984/28/8/085301