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Engineering the electronic structure of surface dangling bond nanowires of different size and dimensionality
We demonstrate how the local density of electronic states evolves as the size and dimensionality of surface dangling bond nanowires are modified. These wires were fabricated using the probe of a scanning tunneling microscope on a hydrogen passivated n-type Si(100)-(2 × 1) surface. We demonstrate tha...
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Published in: | Nanotechnology 2013-07, Vol.24 (27), p.275202-1-7 |
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Main Authors: | , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | We demonstrate how the local density of electronic states evolves as the size and dimensionality of surface dangling bond nanowires are modified. These wires were fabricated using the probe of a scanning tunneling microscope on a hydrogen passivated n-type Si(100)-(2 × 1) surface. We demonstrate that by varying the number and arrangement of dangling bonds on the surface it is possible to arbitrarily engineer the electronic characteristic of a surface nanowire from that of a semiconductor with a controllable band gap to that of a metal. |
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ISSN: | 0957-4484 1361-6528 |
DOI: | 10.1088/0957-4484/24/27/275202 |