Controlled MoS2 layer etching using CF4 plasma

A few-layered molybdenum disulfide (MoS2) thin film grown by plasma enhanced chemical vapor deposition was etched using a CF4 inductively coupled plasma, and the possibility of controlling the MoS2 layer thickness to a monolayer of MoS2 over a large area substrate was investigated. In addition, dama...

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Bibliographic Details
Published in:Nanotechnology 2015-09, Vol.26 (35), p.355706-355706
Main Authors: Jeon, Min Hwan, Ahn, Chisung, Kim, HyeongU, Kim, Kyong Nam, LiN, Tai Zhe, Qin, Hongyi, Kim, Yeongseok, Lee, Sehan, Kim, Taesung, Yeom, Geun Young
Format: Article
Language:English
Subjects:
layer by layer etching
molybdenum disulfide (MoS
plasma
plasma treatment
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Summary:A few-layered molybdenum disulfide (MoS2) thin film grown by plasma enhanced chemical vapor deposition was etched using a CF4 inductively coupled plasma, and the possibility of controlling the MoS2 layer thickness to a monolayer of MoS2 over a large area substrate was investigated. In addition, damage and contamination of the remaining MoS2 layer surface after etching and a possible method for film recovery was also investigated. The results from Raman spectroscopy and atomic force microscopy showed that one monolayer of MoS2 was etched by exposure to a CF4 plasma for 20 s after an initial incubation time of 20 s, i.e., the number of MoS2 layers could be controlled by exposure to the CF4 plasma for a certain processing time. However, XPS data showed that exposure to CF4 plasma induced a certain amount of damage and contamination by fluorine of the remaining MoS2 surface. After exposure to a H2S plasma for more than 10 min, the damage and fluorine contamination of the etched MoS2 surface could be effectively removed.
ISSN:0957-4484
1361-6528
DOI:10.1088/0957-4484/26/35/355706