Bismides: 2D structures and quantum dots

The growth and characterization of ternary GaAsBi and quaternary GaInAsBi compound quantum wells (QWs) on GaAs substrates is presented in this study. The influence of technological parameters, such as different growth modes, substrate temperatures, beam equivalent pressure ratios and thermal treatin...

Full description

Saved in:
Bibliographic Details
Published in:Journal of physics. D, Applied physics Applied physics, 2017-09, Vol.50 (36), p.364002
Main Authors: Pa ebutas, Vaidas, Butkut, Renata, echavi ius, Bronislovas, Stanionyt, Sandra, Pozingyt, Evelina, Skapas, Martynas, Selskis, Algirdas, Gei utis, Andrejus, Krotkus, Ar nas
Format: Article
Language:English
Subjects:
GaAsBi
GaInAsBi
MBE
photoluminescence
quantum dots
quantum wells
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The growth and characterization of ternary GaAsBi and quaternary GaInAsBi compound quantum wells (QWs) on GaAs substrates is presented in this study. The influence of technological parameters, such as different growth modes, substrate temperatures, beam equivalent pressure ratios and thermal treating on structural and luminescent properties of QWs is discussed. The complex structural investigations using x-ray diffraction, atomic force microscopy and high-resolution transmission electron microscopy revealed high crystal structure, smooth surfaces and abrupt interfaces of both GaAsBi and GaInAsBi QWs. The temperature dependent photoluminescence measurements demonstrated emission wavelengths up to 1.43 µm in room temperature PL spectra measured for GaAsBi/GaAs QWs containing 12% Bi, whereas GaInAsBi QWs with 4.2% of bismuth inserted between GaAs barriers has reached 1.25 µm. Moreover, the annealing at high temperatures of GaAsBi/AlAs QWs stimulated agglomeration of bismuth to quantum dots in the well layers, emitting at 1.5 µm. The achieved wavelengths are the longest ones declared for the GaAsBi and GaInAsBi QW structures grown on the GaAs substrate, therefore bismide-based QWs are the promising structures for applications in infrared devices.
ISSN:0022-3727
1361-6463
DOI:10.1088/1361-6463/aa7bdb