Fabrication of high responsivity deep UV photo-detector based on Na doped ZnO nanocolumns

• Published in: Journal of physics. D, Applied physics Applied physics, 2018-05, Vol.51 (18), p.185106
• Main Authors: Agrawal, Jitesh, Dixit, Tejendra, Palani, I A, Ramachandra Rao, M S, Singh, Vipul
• Format: Article
• Language: English
• Subjects: KMnO; photoresponsivity; UV photodetector; ZnO nanocolumns
• ISSN: 0022-3727; 1361-6463
• DOI: 10.1088/1361-6463/aab8d3

We report a variety of the hydrothermally synthesized ZnO nanostructures with a significant suppression in defect-related emission and huge enhancement in the photo-current to the dark current ratio (approximately six orders of magnitude) upon UV light illumination. Interestingly, the photo-detector shows lower dark current of 1.6 nA with high responsivity of 507 A W−1 at 254 nm. Here, a systematic analysis of the growth process as well as the physical, chemical and electrical properties of as-grown ZnO nanostructures has been performed. We have utilized the duo effect of both the inorganic (KMnO4) and organic (Na3C6H5O7) additives, which has facilitated the precise tuning of the morphology and intrinsic defects in nanostructures that have made an impact on the photo-responsivity, photoluminescence (PL) and adhesivity of the film on to the underlying substrate. PL analysis of as-grown ZnO nanostructures has suggested 11 times improvement in the near band emission (NBE) to defect level emission (DLE) ratio. Interestingly, thermal annealing of the samples has shown a dramatic change in the morphology with significant improvement in the crystallinity. Notably, the band gap was observed to be modulated from 3.3 eV to 3.1 eV after annealing. In addition to UV photo-detector based applications, the work presented here has provided a subtle solution towards the rectification of various problems pertaining to hydrothermal processes like poor adhesivity, feeble UV emission and problem in precise tuning of the morphology along with the bandgap in one go. Therefore, these investigations assume critical significance towards the development of next-generation optoelectronic devices.