Impurity-enhanced solid-state amorphization: the Ni-Si thin film reaction altered by nitrogen

Solid-state amorphization, the growth of an amorphous phase during annealing, has been studied in a wide variety of thin film structures. Whereas research on the remarkable growth of such a metastable phase has mostly focused on strictly binary systems, far less is known about the influence of impur...

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Bibliographic Details
Published in:Journal of physics. D, Applied physics Applied physics, 2019-04, Vol.52 (14), p.145301
Main Authors: van Stiphout, K, Geenen, F A, Santos, N M, Miranda, S M C, Joly, V, Demeulemeester, J, Detavernier, C, Kremer, F, Pereira, L M C, Temst, K, Vantomme, A
Format: Article
Language:English
Subjects:
amorphous films
crystallization
impurity
nickel
silicides
solid-state amorphization
thin film reactions
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Summary:Solid-state amorphization, the growth of an amorphous phase during annealing, has been studied in a wide variety of thin film structures. Whereas research on the remarkable growth of such a metastable phase has mostly focused on strictly binary systems, far less is known about the influence of impurities on such reactions. In this paper, the influence of nitrogen, introduced via ion implantation, is studied on the solid-state amorphization reaction of thin (35 nm) Ni films with Si, using in situ x-ray diffraction (XRD), ex situ Rutherford backscattering spectrometry, XTEM, and synchrotron XRD. It is shown that due to small amounts of nitrogen (
ISSN:0022-3727
1361-6463
DOI:10.1088/1361-6463/ab00d2