Optical study of a two-level defect complex in gallium doped ZnO

By means of all optical characterizations, carrier dynamics of GaZn-VZn defect complex in Ga doped ZnO film has been systematically studied. It is observed that the defect complex exhibits a red emission centered at 650 nm, different from that of a reference sample containing VO only. From our obser...

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Bibliographic Details
Published in:Journal of physics. D, Applied physics Applied physics, 2019-07, Vol.52 (27), p.275101
Main Authors: Hou, Y, Tang, A, Liang, H, Du, X, Mei, Z
Format: Article
Language:English
Subjects:
2-level system
defect
spectroscopy
ZnO
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Summary:By means of all optical characterizations, carrier dynamics of GaZn-VZn defect complex in Ga doped ZnO film has been systematically studied. It is observed that the defect complex exhibits a red emission centered at 650 nm, different from that of a reference sample containing VO only. From our observations using time-resolved photoluminescence and multiple-wavelength excitation photoluminescence measurements, the energy level of GaZn-VZn is determined to be a two-level system, which is fundamentally different from the reference sample with only a deep level in term of carrier dynamics. This work reveals that GaZn-VZn distinguished from the widely observed VO is a potential candidate for new single photon emitters.
ISSN:0022-3727
1361-6463
DOI:10.1088/1361-6463/ab1981