High-mobility GaN-on-sapphire p-n diodes with near-unity ideality factor and large breakdown voltage

In this work, GaN-based p-n diodes with thick drift layers grown by metal organic vapor phase epitaxy (MOVPE) on sapphire were investigated. We discuss their characteristics and develop a simulation model to fit the experimental data. The fabricated diodes feature almost linear ohmic p-GaN contacts,...

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Bibliographic Details
Published in:Journal of physics. D, Applied physics Applied physics, 2019-07, Vol.52 (28), p.285101
Main Authors: Kotzea, S, Debald, A, Heuken, M, Kalisch, H, Vescan, A
Format: Article
Language:English
Subjects:
GaN
GaN-on-sapphire
high mobility
p-n diode
vertical power devices
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Summary:In this work, GaN-based p-n diodes with thick drift layers grown by metal organic vapor phase epitaxy (MOVPE) on sapphire were investigated. We discuss their characteristics and develop a simulation model to fit the experimental data. The fabricated diodes feature almost linear ohmic p-GaN contacts, a near-unity ideality factor, a high electron mobility cm2 V−1 s−1, low m cm2 and a large breakdown voltage V.
ISSN:0022-3727
1361-6463
DOI:10.1088/1361-6463/ab1b0b