Piezoelectric enhancement of a defect-mediated boron nitride nanotube

A zigzag boron nitride nanotube (ZBNNT) has a large intrinsic polarized dipole and a piezoelectric tunability with crystal chirality, nanotube diameter, and point defect. The piezoelectric coefficients (e33) of 8-ZBNNT with the VIA-group defects of SN and SeN are estimated to be 18.7  ×  10−2 C m−2...

Full description

Saved in:
Bibliographic Details
Published in:Journal of physics. D, Applied physics Applied physics, 2019-08, Vol.52 (33), p.335304
Main Authors: Yu, Sheng, Tabibi, Bagher, Li, Qiliang, Seo, Felix Jaetae
Format: Article
Language:English
Subjects:
boron nitride nanotube
defects
piezoelectricity
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A zigzag boron nitride nanotube (ZBNNT) has a large intrinsic polarized dipole and a piezoelectric tunability with crystal chirality, nanotube diameter, and point defect. The piezoelectric coefficients (e33) of 8-ZBNNT with the VIA-group defects of SN and SeN are estimated to be 18.7  ×  10−2 C m−2 and 14.9  ×  10−2 C m−2, respectively. The coefficients of defect-mediated 8-ZBNNT are 97% and 57% bigger than that of pristine 8-ZBNNT. The elastic modulus of 8-ZBNNT is decreased due to the VIA-group defects, but is increased for the larger number of unit cells along zigzag rolling direction. The electronic band gap of 8-ZBNNT is reduced due to the VIA-group defects. The large piezoelectricity enhancement of 8-ZBNNT with VIA-group defect is attributable to the ionic contribution. Therefore, the unprecedented defect-mediated 8-ZBNNT provides a new material platform of mechanoelectronic devices for nanoscale sensors and energy conversions.
ISSN:0022-3727
1361-6463
DOI:10.1088/1361-6463/ab2582