Tuning the on/off current ratio in ionic-liquid gated multi-layer MoS2 field-effect transistors

Ionic-liquid gated multi-layer MoS2 field-effect transistors were fabricated and their electrical properties related to maximum depletion depth, bulk neutral and surface accumulation conduction were investigated in detail. A negative back-gate bias resulted in a depletion of the bulk neutral channel...

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Bibliographic Details
Published in:Journal of physics. D, Applied physics Applied physics, 2020-07, Vol.53 (27)
Main Authors: Jeon, Dae-Young, Nam, Deuk Hyeon, Lee, Dong Su, Lee, Seoung-Ki, Park, Min, Park, So Jeong, Kim, Gyu-Tae
Format: Article
Language:English
Subjects:
analytical equations
back-gate biasing
field-effect transistors
ionic-liquid
multi-layer MoS
numerical simulation
on-current to off-current ratio
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Summary:Ionic-liquid gated multi-layer MoS2 field-effect transistors were fabricated and their electrical properties related to maximum depletion depth, bulk neutral and surface accumulation conduction were investigated in detail. A negative back-gate bias resulted in a depletion of the bulk neutral channel at the bottom interface, which significantly enhanced transistor performance in terms of the on-current to off-current (Ion/Ioff) ratio and the off-state current level. The experimental results were verified by numerical simulations and analytical equations. These findings are critical for the optimization of the Ion/Ioff ratio of multi-layer MoS2 transistors for energy efficient electronics and low power applications.
ISSN:0022-3727
1361-6463
DOI:10.1088/1361-6463/ab84a5