Tuning the on/off current ratio in ionic-liquid gated multi-layer MoS2 field-effect transistors

Ionic-liquid gated multi-layer MoS2 field-effect transistors were fabricated and their electrical properties related to maximum depletion depth, bulk neutral and surface accumulation conduction were investigated in detail. A negative back-gate bias resulted in a depletion of the bulk neutral channel...

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Published in:Journal of physics. D, Applied physics Applied physics, 2020-07, Vol.53 (27)
Main Authors: Jeon, Dae-Young, Nam, Deuk Hyeon, Lee, Dong Su, Lee, Seoung-Ki, Park, Min, Park, So Jeong, Kim, Gyu-Tae
Format: Article
Language:English
Subjects:
analytical equations
back-gate biasing
field-effect transistors
ionic-liquid
multi-layer MoS
numerical simulation
on-current to off-current ratio
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container_issue 27
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container_title Journal of physics. D, Applied physics
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creator Jeon, Dae-Young
Nam, Deuk Hyeon
Lee, Dong Su
Lee, Seoung-Ki
Park, Min
Park, So Jeong
Kim, Gyu-Tae
description Ionic-liquid gated multi-layer MoS2 field-effect transistors were fabricated and their electrical properties related to maximum depletion depth, bulk neutral and surface accumulation conduction were investigated in detail. A negative back-gate bias resulted in a depletion of the bulk neutral channel at the bottom interface, which significantly enhanced transistor performance in terms of the on-current to off-current (Ion/Ioff) ratio and the off-state current level. The experimental results were verified by numerical simulations and analytical equations. These findings are critical for the optimization of the Ion/Ioff ratio of multi-layer MoS2 transistors for energy efficient electronics and low power applications.
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fullrecord <record><control><sourceid>iop</sourceid><recordid>TN_cdi_iop_journals_10_1088_1361_6463_ab84a5</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>dab84a5</sourcerecordid><originalsourceid>FETCH-LOGICAL-i223t-53fcd98aa693a48ff71ac32b10dc4965f6157c3f6bfacd896e1903544908a2003</originalsourceid><addsrcrecordid>eNptkE1LAzEYhIMoWKt3jzl5MvZNsslmj1K0ChUP1nNI81FT1qRmswf_vS0VT8LAwDDMwIPQNYU7CkrNKJeUyEbymVmrxogTNPmLTtEEgDHCW9aeo4th2AKAkIpOkF6NKaYNrh8e5zTLIWA7luJTxcXUmHFMOOYULenj1xgd3pjqHf4c-xpJb759wS_5jeEQfe-ID8HbimsxaYhDzWW4RGfB9IO_-vUpen98WM2fyPJ18Ty_X5LIGK9E8GBdp4yRHTeNCqGlxnK2puBs00kRJBWt5UGug7FOddLTDrhomg6UYQB8im6PuzHv9DaPJe3fNAV9gKMPJPSBhD7C2ddv_qk7Lbhm7V6CQqN3LvAf3fJlGA</addsrcrecordid><sourcetype>Enrichment Source</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Tuning the on/off current ratio in ionic-liquid gated multi-layer MoS2 field-effect transistors</title><source>Institute of Physics:Jisc Collections:IOP Publishing Read and Publish 2024-2025 (Reading List)</source><creator>Jeon, Dae-Young ; Nam, Deuk Hyeon ; Lee, Dong Su ; Lee, Seoung-Ki ; Park, Min ; Park, So Jeong ; Kim, Gyu-Tae</creator><creatorcontrib>Jeon, Dae-Young ; Nam, Deuk Hyeon ; Lee, Dong Su ; Lee, Seoung-Ki ; Park, Min ; Park, So Jeong ; Kim, Gyu-Tae</creatorcontrib><description>Ionic-liquid gated multi-layer MoS2 field-effect transistors were fabricated and their electrical properties related to maximum depletion depth, bulk neutral and surface accumulation conduction were investigated in detail. A negative back-gate bias resulted in a depletion of the bulk neutral channel at the bottom interface, which significantly enhanced transistor performance in terms of the on-current to off-current (Ion/Ioff) ratio and the off-state current level. The experimental results were verified by numerical simulations and analytical equations. These findings are critical for the optimization of the Ion/Ioff ratio of multi-layer MoS2 transistors for energy efficient electronics and low power applications.</description><identifier>ISSN: 0022-3727</identifier><identifier>EISSN: 1361-6463</identifier><identifier>DOI: 10.1088/1361-6463/ab84a5</identifier><identifier>CODEN: JPAPBE</identifier><language>eng</language><publisher>IOP Publishing</publisher><subject>analytical equations ; back-gate biasing ; field-effect transistors ; ionic-liquid ; multi-layer MoS ; numerical simulation ; on-current to off-current ratio</subject><ispartof>Journal of physics. D, Applied physics, 2020-07, Vol.53 (27)</ispartof><rights>2020 IOP Publishing Ltd</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><orcidid>0000-0002-5431-7690 ; 0000-0002-3781-8514 ; 0000-0003-1966-8572</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Jeon, Dae-Young</creatorcontrib><creatorcontrib>Nam, Deuk Hyeon</creatorcontrib><creatorcontrib>Lee, Dong Su</creatorcontrib><creatorcontrib>Lee, Seoung-Ki</creatorcontrib><creatorcontrib>Park, Min</creatorcontrib><creatorcontrib>Park, So Jeong</creatorcontrib><creatorcontrib>Kim, Gyu-Tae</creatorcontrib><title>Tuning the on/off current ratio in ionic-liquid gated multi-layer MoS2 field-effect transistors</title><title>Journal of physics. D, Applied physics</title><addtitle>JPhysD</addtitle><addtitle>J. Phys. D: Appl. Phys</addtitle><description>Ionic-liquid gated multi-layer MoS2 field-effect transistors were fabricated and their electrical properties related to maximum depletion depth, bulk neutral and surface accumulation conduction were investigated in detail. A negative back-gate bias resulted in a depletion of the bulk neutral channel at the bottom interface, which significantly enhanced transistor performance in terms of the on-current to off-current (Ion/Ioff) ratio and the off-state current level. The experimental results were verified by numerical simulations and analytical equations. These findings are critical for the optimization of the Ion/Ioff ratio of multi-layer MoS2 transistors for energy efficient electronics and low power applications.</description><subject>analytical equations</subject><subject>back-gate biasing</subject><subject>field-effect transistors</subject><subject>ionic-liquid</subject><subject>multi-layer MoS</subject><subject>numerical simulation</subject><subject>on-current to off-current ratio</subject><issn>0022-3727</issn><issn>1361-6463</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><sourceid/><recordid>eNptkE1LAzEYhIMoWKt3jzl5MvZNsslmj1K0ChUP1nNI81FT1qRmswf_vS0VT8LAwDDMwIPQNYU7CkrNKJeUyEbymVmrxogTNPmLTtEEgDHCW9aeo4th2AKAkIpOkF6NKaYNrh8e5zTLIWA7luJTxcXUmHFMOOYULenj1xgd3pjqHf4c-xpJb759wS_5jeEQfe-ID8HbimsxaYhDzWW4RGfB9IO_-vUpen98WM2fyPJ18Ty_X5LIGK9E8GBdp4yRHTeNCqGlxnK2puBs00kRJBWt5UGug7FOddLTDrhomg6UYQB8im6PuzHv9DaPJe3fNAV9gKMPJPSBhD7C2ddv_qk7Lbhm7V6CQqN3LvAf3fJlGA</recordid><startdate>20200701</startdate><enddate>20200701</enddate><creator>Jeon, Dae-Young</creator><creator>Nam, Deuk Hyeon</creator><creator>Lee, Dong Su</creator><creator>Lee, Seoung-Ki</creator><creator>Park, Min</creator><creator>Park, So Jeong</creator><creator>Kim, Gyu-Tae</creator><general>IOP Publishing</general><scope/><orcidid>https://orcid.org/0000-0002-5431-7690</orcidid><orcidid>https://orcid.org/0000-0002-3781-8514</orcidid><orcidid>https://orcid.org/0000-0003-1966-8572</orcidid></search><sort><creationdate>20200701</creationdate><title>Tuning the on/off current ratio in ionic-liquid gated multi-layer MoS2 field-effect transistors</title><author>Jeon, Dae-Young ; Nam, Deuk Hyeon ; Lee, Dong Su ; Lee, Seoung-Ki ; Park, Min ; Park, So Jeong ; Kim, Gyu-Tae</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i223t-53fcd98aa693a48ff71ac32b10dc4965f6157c3f6bfacd896e1903544908a2003</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>analytical equations</topic><topic>back-gate biasing</topic><topic>field-effect transistors</topic><topic>ionic-liquid</topic><topic>multi-layer MoS</topic><topic>numerical simulation</topic><topic>on-current to off-current ratio</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Jeon, Dae-Young</creatorcontrib><creatorcontrib>Nam, Deuk Hyeon</creatorcontrib><creatorcontrib>Lee, Dong Su</creatorcontrib><creatorcontrib>Lee, Seoung-Ki</creatorcontrib><creatorcontrib>Park, Min</creatorcontrib><creatorcontrib>Park, So Jeong</creatorcontrib><creatorcontrib>Kim, Gyu-Tae</creatorcontrib><jtitle>Journal of physics. D, Applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Jeon, Dae-Young</au><au>Nam, Deuk Hyeon</au><au>Lee, Dong Su</au><au>Lee, Seoung-Ki</au><au>Park, Min</au><au>Park, So Jeong</au><au>Kim, Gyu-Tae</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Tuning the on/off current ratio in ionic-liquid gated multi-layer MoS2 field-effect transistors</atitle><jtitle>Journal of physics. D, Applied physics</jtitle><stitle>JPhysD</stitle><addtitle>J. Phys. D: Appl. Phys</addtitle><date>2020-07-01</date><risdate>2020</risdate><volume>53</volume><issue>27</issue><issn>0022-3727</issn><eissn>1361-6463</eissn><coden>JPAPBE</coden><abstract>Ionic-liquid gated multi-layer MoS2 field-effect transistors were fabricated and their electrical properties related to maximum depletion depth, bulk neutral and surface accumulation conduction were investigated in detail. A negative back-gate bias resulted in a depletion of the bulk neutral channel at the bottom interface, which significantly enhanced transistor performance in terms of the on-current to off-current (Ion/Ioff) ratio and the off-state current level. The experimental results were verified by numerical simulations and analytical equations. These findings are critical for the optimization of the Ion/Ioff ratio of multi-layer MoS2 transistors for energy efficient electronics and low power applications.</abstract><pub>IOP Publishing</pub><doi>10.1088/1361-6463/ab84a5</doi><tpages>7</tpages><orcidid>https://orcid.org/0000-0002-5431-7690</orcidid><orcidid>https://orcid.org/0000-0002-3781-8514</orcidid><orcidid>https://orcid.org/0000-0003-1966-8572</orcidid></addata></record>
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source Institute of Physics:Jisc Collections:IOP Publishing Read and Publish 2024-2025 (Reading List)
subjects analytical equations
back-gate biasing
field-effect transistors
ionic-liquid
multi-layer MoS
numerical simulation
on-current to off-current ratio
title Tuning the on/off current ratio in ionic-liquid gated multi-layer MoS2 field-effect transistors
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-30T23%3A09%3A07IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-iop&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Tuning%20the%20on/off%20current%20ratio%20in%20ionic-liquid%20gated%20multi-layer%20MoS2%20field-effect%20transistors&rft.jtitle=Journal%20of%20physics.%20D,%20Applied%20physics&rft.au=Jeon,%20Dae-Young&rft.date=2020-07-01&rft.volume=53&rft.issue=27&rft.issn=0022-3727&rft.eissn=1361-6463&rft.coden=JPAPBE&rft_id=info:doi/10.1088/1361-6463/ab84a5&rft_dat=%3Ciop%3Edab84a5%3C/iop%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-i223t-53fcd98aa693a48ff71ac32b10dc4965f6157c3f6bfacd896e1903544908a2003%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true