High mobility In0.75Ga0.25As quantum wells in an InAs phonon lattice

InGaAs based devices are great complements to silicon for CMOS, as they provide an increased carrier saturation velocity, lower operating voltage and reduced power dissipation (International technology roadmap for semiconductors (www.itrs2.net)). In this work we show that In0.75Ga0.25As quantum well...

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Bibliographic Details
Published in:Journal of physics. Condensed matter 2018-02, Vol.30 (10), p.105705-105705
Main Authors: Chen, C, Holmes, S N, Farrer, I, Beere, H E, Ritchie, D A
Format: Article
Language:English
Subjects:
InAs phonon
magnet-phonon resonance
scattering
Online Access:Get full text
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Summary:InGaAs based devices are great complements to silicon for CMOS, as they provide an increased carrier saturation velocity, lower operating voltage and reduced power dissipation (International technology roadmap for semiconductors (www.itrs2.net)). In this work we show that In0.75Ga0.25As quantum wells with a high mobility, 15 000 to 20 000 cm2 V−1 s−1 at ambient temperature, show an InAs-like phonon with an energy of 28.8 meV, frequency of 232 cm−1 that dominates the polar-optical mode scattering from   70 K to 300 K. The measured optical phonon frequency is insensitive to the carrier density modulated with a surface gate or LED illumination. We model the electron scattering mechanisms as a function of temperature and identify mechanisms that limit the electron mobility in In0.75Ga0.25As quantum wells. Background impurity scattering starts to dominate for temperatures  
ISSN:0953-8984
1361-648X
DOI:10.1088/1361-648X/aaa947