MnSi nanostructures obtained from epitaxially grown thin films: magnetotransport and Hall effect

We present a comparative study of the (magneto)transport properties, including Hall effect, of bulk, epitaxially grown thin film and nanostructured MnSi. In order to set our results in relation to published data we extensively characterize our materials, this way establishing a comparatively good sa...

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Bibliographic Details
Published in:Journal of physics. Condensed matter 2018-06, Vol.30 (23), p.235805
Main Authors: Schroeter, D, Steinki, N, Schilling, M, Fernández Scarioni, A, Krzysteczko, P, Dziomba, T, Schumacher, H W, Menzel, D, Süllow, S
Format: Article
Language:English
Subjects:
growth
Hall effect
magnetoresistance
MnSi
nanostructures
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Summary:We present a comparative study of the (magneto)transport properties, including Hall effect, of bulk, epitaxially grown thin film and nanostructured MnSi. In order to set our results in relation to published data we extensively characterize our materials, this way establishing a comparatively good sample quality. Our analysis reveals that in particular for thin film and nanostructured material, there are extrinsic and intrinsic contributions to the electronic transport properties, which by modeling the data we separate out. Finally, we discuss our Hall effect data of nanostructured MnSi under consideration of the extrinsic contributions and with respect to the question of the detection of a topological Hall effect in a skyrmionic lattice.
ISSN:0953-8984
1361-648X
DOI:10.1088/1361-648X/aabf5c