One-step H2S reactive sputtering for 2D MoS2/Si heterojunction photodetector

A technique for directly growing two-dimensional (2D) materials onto conventional semiconductor substrates, enabling high-throughput and large-area capability, is required to realise competitive 2D transition metal dichalcogenide devices. A reactive sputtering method based on H2S gas molecules and s...

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Bibliographic Details
Published in:Nanotechnology 2020-05, Vol.31 (22), p.225205-225205
Main Authors: Jang, Hye Yeon, Nam, Jae Hyeon, Yoon, Jongwon, Kim, Yonghun, Park, Woojin, Cho, Byungjin
Format: Article
Language:English
Subjects:
heterojunction photodiode
S gas, reactive sputtering
two-dimensional layered MoS
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Summary:A technique for directly growing two-dimensional (2D) materials onto conventional semiconductor substrates, enabling high-throughput and large-area capability, is required to realise competitive 2D transition metal dichalcogenide devices. A reactive sputtering method based on H2S gas molecules and sequential in situ post-annealing treatment in the same chamber was proposed to compensate for the relatively deficient sulfur atoms in the sputtering of MoS2 and then applied to a 2D MoS2/p-Si heterojunction photodevice. X-ray photoelectron, Raman, and UV-visible spectroscopy analysis of the as-deposited Ar/H2S MoS2 film were performed, indicating that the stoichiometry and quality of the as-deposited MoS2 can be further improved compared with the Ar-only MoS2 sputtering method. For example, Ar/H2S MoS2 photodiode has lower defect densities than that of Ar MoS2. We also determined that the factors affecting photodetector performance can be optimised in the 8-12 nm deposited thickness range.
ISSN:0957-4484
1361-6528
DOI:10.1088/1361-6528/ab7606