Coulomb blockade and Coulomb staircases in CoBi nanoislands on SrTiO3 (001)

We successfully fabricated two-dimensional metallic CoBi nanoislands on SrTiO3(001) substrate by molecular beam epitaxy, and systematically investigated their electronic structures by scanning tunneling microscopy and spectroscopyin situat 4.2 K. Coulomb blockade and Coulomb staircases with discrete...

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Bibliographic Details
Published in:Nanotechnology 2024-07, Vol.35 (29)
Main Authors: Xia, Yumin, Cai, Desheng, Gao, Jiaqing, Li, Pengju, Xie, Kun, Liu, Yuzhou, Gu, Yitong, Yu, Gan, Cui, Ping, Qin, Shengyong
Format: Article
Language:English
Subjects:
CoBi/SrTiO
Coulomb blockade
Coulomb staircases
single electron tunneling
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Summary:We successfully fabricated two-dimensional metallic CoBi nanoislands on SrTiO3(001) substrate by molecular beam epitaxy, and systematically investigated their electronic structures by scanning tunneling microscopy and spectroscopyin situat 4.2 K. Coulomb blockade and Coulomb staircases with discrete and well-separated levels are observed for the individual nanoisland, which is attributed to single-electron tunneling via two tunnel junction barriers. They are in excellent agreement with the simulations based on orthodox theory. Furthermore, we demonstrated that the Coulomb blockade becomes weaker with increasing temperature and almost disappears at ∼22 K in our variable temperature experiment, and its full-width at half-maximum of dI/dVpeaks with temperature is ∼6 mV. Our results provide a new platform for designing single-electron transistors that have potential applications in future microelectronics.
ISSN:0957-4484
1361-6528
DOI:10.1088/1361-6528/ad1943