Paper based flexible MoS2-CNT hybrid memristors

We report for the first time MoS2/CNT hybrid nanostructures for memristor applications on flexible and bio-degradable cellulose paper. In our approach, we varied two different weight percentages (10% and 20%) of CNT's in MoS2to improve the MoS2conductivity and investigate the memristor device c...

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Bibliographic Details
Published in:Nanotechnology 2024-05, Vol.35 (21)
Main Authors: Naik, B Raju, Arya, Nitika, Balakrishnan, Viswanath
Format: Article
Language:English
Subjects:
carbon nanotube
composites
filament formation
flexible memristor
molybdenum disulfide
Online Access:Get full text
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Summary:We report for the first time MoS2/CNT hybrid nanostructures for memristor applications on flexible and bio-degradable cellulose paper. In our approach, we varied two different weight percentages (10% and 20%) of CNT's in MoS2to improve the MoS2conductivity and investigate the memristor device characteristics. The device with 10% CNT shows a lowVSETvoltage of 2.5 V, which is comparatively small for planar devices geometries. The device exhibits a long data retention time and cyclic current-voltage stability of ∼104s and 102cycles, making it a potential candidate in flexible painted electronics. Along with good electrical performance, it also demonstrates a high mechanical stability for 1000 bending cycles. The conduction mechanism in the MoS2-CNT hybrid structure is corroborated by percolation and defect-induced filament formation. Additionally, the device displays synaptic plasticity performance, simulating potentiation and depression processes. Furthermore, such flexible and biodegradable cellulose-based paper electronics may pave the way to address the environmental pollution caused by electronic waste in the near future.
ISSN:0957-4484
1361-6528
DOI:10.1088/1361-6528/ad2a01