Strong doping of the n-optical confinement layer for increasing output power of high- power pulsed laser diodes in the eye safe wavelength range

An analytical model for internal optical losses at high power in a 1.5 m laser diode with strong n-doping in the n-side of the optical confinement layer is created. The model includes intervalence band absorption by holes supplied by both current flow and two-photon absorption (TPA), as well as the...

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Bibliographic Details
Published in:Semiconductor science and technology 2017-12, Vol.32 (12), p.125008
Main Authors: Ryvkin, Boris S, Avrutin, Eugene A, Kostamovaara, Juha T
Format: Article
Language:English
Subjects:
high power lasers
laser efficiency
laser theory
semiconductor lasers
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Summary:An analytical model for internal optical losses at high power in a 1.5 m laser diode with strong n-doping in the n-side of the optical confinement layer is created. The model includes intervalence band absorption by holes supplied by both current flow and two-photon absorption (TPA), as well as the direct TPA effect. The resulting losses are compared with those in an identical structure with a weakly doped waveguide, and shown to be substantially lower, resulting in a significant improvement in the output power and efficiency in the structure with a strongly doped waveguide.
ISSN:0268-1242
1361-6641
DOI:10.1088/1361-6641/aa92fd