Strong doping of the n-optical confinement layer for increasing output power of high- power pulsed laser diodes in the eye safe wavelength range

An analytical model for internal optical losses at high power in a 1.5 m laser diode with strong n-doping in the n-side of the optical confinement layer is created. The model includes intervalence band absorption by holes supplied by both current flow and two-photon absorption (TPA), as well as the...

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Published in:Semiconductor science and technology 2017-12, Vol.32 (12), p.125008
Main Authors: Ryvkin, Boris S, Avrutin, Eugene A, Kostamovaara, Juha T
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Language:English
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high power lasers
laser efficiency
laser theory
semiconductor lasers
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description An analytical model for internal optical losses at high power in a 1.5 m laser diode with strong n-doping in the n-side of the optical confinement layer is created. The model includes intervalence band absorption by holes supplied by both current flow and two-photon absorption (TPA), as well as the direct TPA effect. The resulting losses are compared with those in an identical structure with a weakly doped waveguide, and shown to be substantially lower, resulting in a significant improvement in the output power and efficiency in the structure with a strongly doped waveguide.
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subjects high power lasers
laser efficiency
laser theory
semiconductor lasers
title Strong doping of the n-optical confinement layer for increasing output power of high- power pulsed laser diodes in the eye safe wavelength range
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