Effect of inhomogeneous Schottky barrier height of SnO2 nanowires device

The current-voltage (I-V) characteristics of metal-semiconductor junction (Au-Ni/SnO2/Au-Ni) Schottky barrier in SnO2 nanowires were investigated over a wide temperature range. By using the Schottky-Mott model, the zero bias barrier height ΦB was estimated from I-V characteristics, and it was found...

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Bibliographic Details
Published in:Semiconductor science and technology 2018-04, Vol.33 (5)
Main Authors: Amorim, Cleber A, Bernardo, Eric P, Leite, Edson R, Chiquito, Adenilson J
Format: Article
Language:English
Subjects:
gaussian ditribution
nanowire
tin oxide
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Summary:The current-voltage (I-V) characteristics of metal-semiconductor junction (Au-Ni/SnO2/Au-Ni) Schottky barrier in SnO2 nanowires were investigated over a wide temperature range. By using the Schottky-Mott model, the zero bias barrier height ΦB was estimated from I-V characteristics, and it was found to increase with increasing temperature; on the other hand the ideality factor (n) was found to decrease with increasing temperature. The variation in the Schottky barrier and n was attributed to the spatial inhomogeneity of the Schottky barrier height. The experimental I-V characteristics exhibited a Gaussian distribution having mean barrier heights Φ ¯ B of 0.30 eV and standard deviation s of 60 meV. Additionally, the Richardson modified constant was obtained to be 70 A cm−2 K−2, leading to an effective mass of 0.58m0. Consequently, the temperature dependence of I-V characteristics of the SnO2 nanowire devices can be successfully explained on the Schottky-Mott theory framework taking into account a Gaussian distribution of barrier heights.
ISSN:0268-1242
1361-6641
DOI:10.1088/1361-6641/aab69e