Dependence of leakage current in Ni/Si3N4/n-GaN Schottky diodes on deposition conditions of silicon nitride

Metal-insulator-semiconductor (MIS) GaN-based Schottky diodes with an ultra-thin in situ deposited Si3N4 dielectric are fabricated and characterized by current-voltage (I-V) and capacitance-voltage (C-V) measurements. The leakage current of the reverse biased diodes is found to depend strongly on Si...

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Bibliographic Details
Published in:Semiconductor science and technology 2018-10, Vol.33 (11)
Main Authors: Zakheim, Dmitry A, Lundin, Wsevolod V, Sakharov, Alexey V, Zavarin, Eugene E, Brunkov, Pavel N, Lundina, Elena Y, Tsatsulnikov, Andrey F, Karpov, Sergey Yu
Format: Article
Language:English
Subjects:
deposition conditions
GaN
leakage current
MIS Schottky diodes
point defects
silicon nitride
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Summary:Metal-insulator-semiconductor (MIS) GaN-based Schottky diodes with an ultra-thin in situ deposited Si3N4 dielectric are fabricated and characterized by current-voltage (I-V) and capacitance-voltage (C-V) measurements. The leakage current of the reverse biased diodes is found to depend strongly on Si3N4 deposition temperature, with an activation energy of 7.3 eV, and reactor atmosphere (N2 versus H2). The dependence is attributed to point defects originating from the deviation of Si3N4 from stoichiometric composition. Deposition of Si3N4 at low temperatures is shown to substantially suppress the leakage current. The effective barrier heights in the MIS Schottky diodes are also affected by Si3N4 deposition conditions and, in particular, by the deposition temperature.
ISSN:0268-1242
1361-6641
DOI:10.1088/1361-6641/aae242