Epitaxial regrowth and characterizations of vertical GaN transistors on silicon

We report the fabrication of fully-vertical GaN-based metal-oxide-semiconductor field-effect transistors (V-MOSFETs) on Si. A p-GaN current aperture was introduced in the vertical device epi-structure using plasma-based dry etching and epitaxial regrowth technique to control the vertical current con...

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Bibliographic Details
Published in:Semiconductor science and technology 2019-09, Vol.34 (9), p.95013
Main Authors: Biswas, Debaleen, Torii, Naoki, Yamamoto, Keiji, Egawa, Takashi
Format: Article
Language:English
Subjects:
GaN-on-Si
MOSFETs
vertical devices
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Summary:We report the fabrication of fully-vertical GaN-based metal-oxide-semiconductor field-effect transistors (V-MOSFETs) on Si. A p-GaN current aperture was introduced in the vertical device epi-structure using plasma-based dry etching and epitaxial regrowth technique to control the vertical current conduction. The fabricated V-MOSFET exhibited drain current density of 2.5 kA cm−2 with ON-resistance (RON) of 4.3 m -cm2. The transfer characteristics of the device showed a peak trans-conductance (Gm,max) of 248 S cm−2 with a threshold voltage (Vth) of −18.7 V during OFF-to-ON-state sweeping. However, a blocking voltage of 36.5 V (drain current density 0.3 kA cm−2) was observed under an OFF-state condition of the device which needs further improvement for the high-power device applications.
ISSN:0268-1242
1361-6641
DOI:10.1088/1361-6641/ab3154