AlGaN/GaN HEMT channel temperature determination utilizing external heater

An improved method of average channel temperature and channel temperature profile determination is introduced in this paper applied to AlGaN/GaN HEMT using quasi-static I-V characterization and external heater. Particular HEMT resistances and threshold voltage were experimentally determined at diffe...

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Bibliographic Details
Published in:Semiconductor science and technology 2020-02, Vol.35 (2), p.25006
Main Authors: Florovi, M, Szobolovszký, R, Ková, J, Chvála, A, Jacquet, J-C, Delage, S L
Format: Article
Language:English
Subjects:
AlGaN
dissipated power
FET
GaN
HEMT
temperature profile
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Summary:An improved method of average channel temperature and channel temperature profile determination is introduced in this paper applied to AlGaN/GaN HEMT using quasi-static I-V characterization and external heater. Particular HEMT resistances and threshold voltage were experimentally determined at different ambient temperatures from TLM measurements, HEMT output and transfer I-V characteristics. Negligible pinch-off area and leakage current dependence on drain voltage allows to obtain average temperature ∼77 °C for dissipated power 1.5 W using simple recurrent differential calculations. The HEMT channel temperature profile exhibiting maximum peripheral temperature ∼130 °C for dissipated power 1.5 W was simulated and verified utilizing the device electrical parameters variation.
ISSN:0268-1242
1361-6641
DOI:10.1088/1361-6641/ab5d85